dual p-channel enhancement mode field symbol v ds v gs i dm t j , t stg symbol ty p max 78 110 106 150 r jl 64 80 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage -30 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -1.8 -20 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.15 0.73 -55 to 150 t a =70c i d -2.3 AO6801 features v ds (v) = -30v i d = -2.3 a (v gs = -10v) r ds(on) < 135m ? (v gs = -10v) r ds(on) < 185m ? (v gs = -4.5v) r ds(on) < 265m ? (v gs = -2.5v) the AO6801 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product AO6801 is pb-free (meets rohs & sony 259 specifications). AO6801l is a green product ordering option. AO6801 and a o6801l are electrically identical. g1 d1 s1 g2 d2 s2 tsop6 top view g2 s2 g1 d2 s1 d1 1 2 3 6 5 4 general description effect transistor www.freescale.net.cn 1 / 4
AO6801 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.6 -1 -1.4 v i d(on) -20 a 107 135 t j =125c 154 190 135 185 m ? 195 265 m ? g fs 8s v sd -0.85 -1 v i s -1.35 a c iss 409 pf c oss 55 pf c rss 42 pf r g 12 ? q g 4.9 nc q gs 0.6 nc q gd 1.6 nc t d(on) 6.9 ns t r 3.3 ns t d(off) 38.5 ns t f 13.2 ns t rr 15 ns q rr 8nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-2.0a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-2.3a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-2a i s =-1a,v gs =0v v ds =-5v, i d =-2.3a i f =-2.0a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-2.0a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =7.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 2 : june 2005 www.freescale.net.cn 2 / 4
AO6801 typical electrical and thermal characteristics 0 5 10 15 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.5v -2. 5v -2v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 50 75 100 125 150 175 200 225 250 0123456 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v, v gs =-10v v gs =-2.5v 0 50 100 150 200 250 300 350 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a -4v v gs =-2.5v -5 v -3 v www.freescale.net.cn 3 / 4
AO6801 typical electrical and thermal characteristics 0 1 2 3 4 5 0123456 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1s 1 0s d c r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-2.0a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 4
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